continental device india limited data sheet page 1 of 3 silicon planar epitaxial transistors n?p?n transistors marking BC817 = 6d BC817-16 = 6a BC817-25 = 6b BC817-40 = 6c bc818 = 6h bc818-16 = 6e bc818-25 = 6f bc818-40 = 6g absolute maximum ratings BC817 bc818 collector?emitter voltage (v be = 0) v ces max. 50 30 v collector?emitter voltage (open base) v ce0 max. 45 25 v collector current (peak value) i cm max. 1000 ma total power dissipation up to t amb = 25 c p tot max. 250 mw junction temperature t j max. 150 c transition frequency at f = 100 mhz i c = 10ma; v ce = 5v f t > 100 mhz BC817 bc818 pin configuration 1 = base 2 = emitter 3 = collector package outline details all dimensions in mm 3 2 1 sot-23 formed smd package continental device india limited an iso/ts 16949, iso 9001 and iso 14001 certified company
continental device india limited data sheet page 2 of 3 ratings (at t a = 25c unless otherwise specified) limiting values BC817 bc818 collector?emitter voltage (v be = 0) v ces max. 50 30 v collector?emitter voltage (open base) i c = 10 ma v ce0 max. 45 25 v emitter?base voltage (open collector) v eb0 max. 5 5 v collector current (d.c.) i c max. 500 ma collector current (peak value) i cm max. 1000 ma emitter current (peak value) ?i em max. 1000 ma base current (d.c.) i b max. 100 ma base current (peak value) i bm max. 200 ma total power dissipation up to t amb = 25 c p tot max. 250 mw storage temperature t stg ?55 to +150 c junction temperature t j max. 150 c thermal resistance from junction to ambient r th j?a = 500 k/w characteristics t j = 25 c unless otherwise specified collector cut?off current i e = 0; v cb = 20 v; t j = 25 c i cb0 < 100 na i e = 0; v cb = 20v; t j = 150c i cb0 <5 m a emitter cut?off current i c = 0; v eb = 5 v i eb0 <10 m a base emitter voltage * l c = 500 ma; v ce = 1 v v be < 1,2 v saturation voltage i c = 500 ma; i b = 50 ma v cesat < 700 mv d.c. current gain i c = 500 ma; v ce = 1 v h fe >40 i c = 100 ma; v ce = 1 v; BC817/bc818 h fe 100 to 600 BC817?16 h fe 100 to 250 bc818?16 BC817?25 h fe 160 to 400 bc818?25 BC817?40 h fe 250 to 600 bc818?40 transition frequency at f = 100 mhz i c = 10 ma; v ce = 5 v f t > 100 mhz collector capacitance at f = 1 mhz i e = i e = 0; v cb = 10v c c typ. 5 pf BC817 bc818
continental device india limited data sheet page 3 of 3 notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-2579 6150, 5141 1112 fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com
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